Table 1 Heterotrilayers of X-enes on Gr/SiC.

From: Deposition of topological silicene, germanene and stanene on graphene-covered SiC substrates

X-ene

SiC layer

Gr layer

X-ene layer

\({{\boldsymbol{\varepsilon }}}_{{\bf{G}}{\bf{r}}}\) (%)

εX-ene (%)

Silicene

(\(\sqrt{19}\times \sqrt{19})\) R23.4°

(\(\sqrt{28}\times \sqrt{28})\) R19.1°

(\(\sqrt{12}\times \sqrt{12})\) R30.0°

3.67

1.23

Germanene

(\(\sqrt{12}\times \sqrt{12})\) R30.0°

(\(\sqrt{19}\times \sqrt{19})\) R23.4°

(\(\sqrt{7}\times \sqrt{7})\) R19.1°

0.01

\(-0.01\)

Stanene

4 × 4

5 × 5

(\(\sqrt{7}\times \sqrt{7})\) R19.1°

0.68

0.28

  1. Lateral supercells used for the simulation are described within the Wood notation39. To ensure commensurability, the SiC substrate is εX-ene kept unstrained, while a biaxial strain is applied to graphene (\({\varepsilon }_{{\rm{Gr}}}\)) and X-ene (εX-ene).