Figure 3
From: Thickness Dependent Parasitic Channel Formation at AlN/Si Interfaces
Evolution of Dit and τit in the depletion region with gate voltage for 50 nm (left) and 200 nm (right) AlN/p-Si capacitors. Slow and fast traps are denoted by suffixes 1 and 2 respectively. Higher trap densities are observed in the case of the thicker AlN film while the time constants remain similar.
