Figure 2
From: Control of the interaction strength of photonic molecules by nanometer precise 3D fabrication
Experimental measurement of patterning dynamics. (a) SEM image of the t-SPL cantilever (b) Effective capacitor-spring system. (c) The cantilever’s tip height above the surface as a function of substrate voltage V F for z ts0 = 25 nm, 50 nm, 100 nm and 200 nm. The experimental measurement for each height is shown by the solid line; the black dashed line is the result of solving eq. (1) for l eff = 1.04 μm, εA eff/2k = 3.9 × 10 −21 Vm. (d) The static and dynamic deflections for the lightly damped cantilever system (Q ≃ 33). (e) t-SPL topography image after the patterning of a series of 114 nm wide lines, each written at a different heater temperature in a 120 nm thick PPA resist film. V F has been steadily reduced from left to right. (f) The measured patterning depth for the center of each written line as a function of the free swing patterning depth. The curves have been shifted along the x-axis so that they pass through the origin (the unshifted curves are shown in Figure S3). The black dashed line has a slope of 0.8.
