Figure 4 | Scientific Reports

Figure 4

From: Germanium-doped Metallic Ohmic Contacts in Black Phosphorus Field-Effect Transistors with Ultra-low Contact Resistance

Figure 4

(a) TLM results of a BP transistor at gate overdrive voltage of −90 V. A contact resistance (Rc) of 1.18 kΩ∙μm can be obtained by extrapolation to L = 0. (b) Contact resistance (Rc) and sheet resistance (Rs) versus various gate overdrive voltages. As gate overdrive voltage becomes more negative (p-type doping), both Rc and Rs decrease. (c) Intrinsic and extrinsic mobility versus gate overdrive voltage. Blue circles represents extrinsic mobility, while red and black dots represent the intrinsic mobility extracted from experimental Rc and from the fitting results of Rc, respectively.

Back to article page