Figure 5
(a) Output characteristics of a Ti-contact BP transistor at 80 K and 300 K with gate overdrive voltage of −70 V. The I-V curve becomes non-linear Schottky-like from 300 K to 80 K. (b) TLM results of a Ti-contact BP transistor at 80 K and 300 K with gate overdrive voltage of −70 V. Rc increases from 5.21 to 9.74 kΩ∙μm as temperature decreases from 300 to 80 K, which is the characteristics dominated by thermionic emission. (c) Output characteristics of a PGex-contact BP transistor at 80 K and 300 K with gate overdrive voltage of −70 V. Drain current varies linearly with drain voltage as temperature decrease to 80 K. (d) TLM results of a PGex-contact BP transistor at 80 K and 300 K with gate overdrive voltage of −70 V. As temperature decreases from 300 K to 80 K, Rc decreases from 1.55 to 0.87 kΩ∙μm, indicating a metallic contact is formed.
