Figure 5
Mechanism of the resistance modulation by applying V G. Plot of (a), E a and (b), σ0 versus gate bias for the nanowire-based FETs with Y-doped Ta2O5/parylene hybrid gate dielectrics, where L = 2 µm and W = 100 nm in the nanowire channel. The inset of Fig. 5a shows 1/T dependence of lnσ(T) with variety of V G from −30 V to 30 V. Fittings by the least-square method were conducted to find the values of E a and σ 0. All of the correlation coefficients \({|{\rm{r}}|}^{2}\) of the fittings were over 0.99.
