Figure 1

(a) Magnetic phase diagram of CeB₆. Black solid lines correspond to the transitions into AFQ (T _Q ) and AF (T _N ) phases as detected by resistivity measurements⁶; open circles denote the results of microwave measurements in a magnetic field applied along [110] crystallographic direction⁷. Stars and triangles mark characteristic temperatures related to electron nematic effect in CeB₆ (see text); B ₀ corresponds to expected threshold field (see text for details). (b) The temperature dependence of resistivity in zero magnetic field; T _Q and T _N are shown by arrows. (c,d) Magnetoresistance of CeB₆ single crystal at 1.85 K and 4.2 K for different directions of magnetic field B||[001], B||[111] and B||[110] (excitation dc current J||[1–10]). The experimental data are shown by solid circles, the subscripts correspond to the field direction. Lines present the ratios ρ_i/ρ_j (i, j = {100;110;111}). (e,f) The experimental layouts for measuring of the resistivity anisotropy in a magnetic field. The Ce³⁺ ions with the Γ₈ ground state are located at the vertices of the cubic unit cell. In the panel f the orbitals corresponding to different quadrupolar moments are marked as +Q and −Q.