Figure 6
From: Selectable phase formation in VAlN thin films by controlling Al+ subplantation depth
XRD θ-2θ scans as a function of the tilt angle ψ for V0.26Al0.74N films grown with the synchronous bias voltage of −300 V and (a) 30-μs-long pulses with a 50 μs offset, and (b) 130-μs-long pulses with a 30 μs offset. “S” denotes the forbidden 002 reflection from the Si substrate, which appears due to multiple scattering.
