Figure 3 | Scientific Reports

Figure 3

From: Crystallization and Polymorphism of Organic Semiconductor in Thin Film Induced by Surface Segregated Monolayers

Figure 3

GIWAXS patterns of (a) PCBM, (b) pSi/PCBM, (c) pSi and (d) non-annealed PCBM films on silicon wafers. SAED pattern of (e) PCBM and (f) pSi/PCBM films taken by TEM. The diameter of the selected area is 230 nm. AFM height images of (g) pristine PCBM and (h) pSi/PCBM films. Line profiles along the white lines are shown in Figure S11. The pSi/PCBM film were prepared by spin-coating the mixed solution of pSi (1.36 g L−1) and PCBM (10 g L−1). PCBM and pSi films were thermally annealed at 160 °C for 10 min and pSi/PCBM film was annealed at 130 °C for 30 min.

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