Figure 1 | Scientific Reports

Figure 1

From: Anisotropic sensor and memory device with a ferromagnetic tunnel barrier as the only magnetic element

Figure 1

(a) Topography and (b) MFM image of Pt/4nm-LCMO/Nb:STO. MFM is measured at 77 K after zero-field cooling. An equal distribution of up (blue) and down (red) domains is observed. (c) I-V characteristic of junctions of Pt/LCMO/Nb:STO with a LCMO barrier of 2 nm and 4 nm and without barrier taken at 10 K. The schematic of the device and measurement configuration is depicted in the inset.

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