Figure 4 | Scientific Reports

Figure 4

From: High-temperature operation of electrical injection type-II (GaIn)As/Ga(AsSb)/(GaIn)As “W”-quantum well lasers emitting at 1.3 µm

Figure 4

Temperature dependence of the of the threshold current density and differential efficiency of the of a 975 µm long (GaIn)As/Ga(AsSb)/(GaIn)As double “W”-QWH laser. Exponential fits yield characteristic temperatures of T0 = (132 ± 3) K over the whole temperature range and T1 = (159 ± 13) K between 10 °C and 70 °C and T1 = (40 ± 1) between 80 °C and 100 °C.

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