Table 2 Device and material parameters used in all simulations.
Parameters | Value |
|---|---|
V | 100 nm × 60 nm × 2 nm |
M s , α | 800 emu/cm3, 0.01 |
H an , H d | 200 Oe, 10000 Oe |
R MTJ , P MTJ | 400 Ω, 0.6 |
R read , R L | 400 Ω, 50 Ω |
θ SHE , λ sf , ρ W 42 | 0.4, 3.5 nm, 210 μΩcm |
l SHE , w SHE , t SHE 42 | 60 nm, 100 nm, 9 nm |
B eff 46 | −9 × 107 erg/cm3 |
H ext , V read , V tune | 300 Oe, 10 mV, 15–50 mV |
E Si , ρ Si , ε AlN , e33 | 170 GPa, 2330 g/cm3, 9, 1.55 C/m2 |
r HBAR , t AlN | 75 μm, 1 μm |
w CPW , R CPW | 100 nm, 1 kΩ |
t sim , t step (SPICE) | 10 μs, 0.1 ps |
f min , f max , N (FFT) | 0.1 MHz, 13.1 GHz, 262144 |
