Figure 3
The electrical responses of Ta2O3−x-based neuromorphic device under various measurement conditions with (a) the compliance-free electroforming of Ta2O3−x based neuromorphic device and inset showing the conduction mechanism during forming, (b) analog RESET process of the device under the consecutive nine sweeps using −1.2 V, (c) the digital compliance-free SET process with double sweeps in the range of 0 ~ +1.3 V, (d) analog RESET with double sweeps in the range of 0 ~ −1.2 V showing the temporary stuck at the highest HRS, (e) analog switching behaviors using higher voltages with gradual voltage increase in magnitude at the negative bias and it leads to final failure process, and (f) cumulative probability graphs of forming voltage and SET voltages.
