Figure 2
From: High surface recombination velocity limits Quasi-Fermi level splitting in kesterite absorbers
AFM and KPFM results of the as-grown (a–d) and NH4OH etched absorber (e–h). The topography is depicted in (a,e), the Laplace transformation of the topography shown in (a) is shown in (b), the contact potential difference map in (c,g), the work function changes at the GBs according to equation 1 in (d,f) and in (h) the average work functions of the as grown and NH4OH etched absorber.
