Figure 11

Dislocation characteristic in the samples crept at 980 °C/250 MPa (solidified at 25 μm/s). In the case of 0 T, there is dislocation gliding in the γ channel (a), dislocation cutting in the γ′ phase (b), and regular (c) and irregular (d) dislocation network at the γ/γ′ interface and in the γ channel. In the samples prepared under 0.5 T (e), 1 T (f), 1.5 T (g), and 2 T (h), the dislocation accumulated at the γ/γ′ interface and cut in the γ′ phase.