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Figure 1

From: Spin orbit torques induced magnetization reversal through asymmetric domain wall propagation in Ta/CoFeB/MgO structures

Figure 1

Anomalous Hall effect (AHE) and current-induced switching in the Ta/CoFeB/MgO structure. (a) Top-view photomicrograph of a device showing the configuration for AHE measurements, and coordinate system. (b) In-plane and out-of-plane (inset) magnetic field dependence of the Hall resistance R H . (c) and (d) show the measurement results for current-induced magnetization switching from R H values for various constant in-plane magnetic fields H x . In measurements, a small current of 0.1 mA between two consecutive current pulses was used to detect the magnetization orientation in the devices.

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