Figure 1
From: On the origins of transport inefficiencies in mesoscopic networks
(a) Scanning electron micrograph of the network whose conductance (G) is measured. (b) AFM topography of the network embedded in an artist’s view of the tip-network system. The different parameters present in an SGM experiment are shown: the tip potential (V tip ), the tip-sample surface distance (d tip ) and the backgate potential (V BG ). (c) Conductance measurement as a function of V tip with the tip scanned along the dashed white line in (a), for d tip = 80 nm and V BG = −0.1 V. The vertical axes of (a) and (c) are matched. Note that the same data is presented in Supplementary Fig. 1a with a different color scale, and Supplementary Fig. 1b displays a mapping of \(\frac{{\rm{d}}G}{{\rm{d}}{V}_{tip}}|{V}_{BG}\) calculated from data in Fig. 1c. (d) G measurement along the dashed red line in (c) and (e). Note that the anomaly in (c) and (d) occurs when the tip is right above the central branch of the network. (e) G mapping as a function of V tip and V BG with the tip located 80 nm above the middle of the central channel. The black dashed line follows an iso-conductance line.
