Figure 1
From: Gate Modulation of the Spin-orbit Interaction in Bilayer Graphene Encapsulated by WS2 films
Schematic and electrical characteristics of a WS2/BLG/WS2 sandwich device. (a) Bilayer graphene (BLG) is sandwiched between multilayer WS2. (b) Optical microscope image of the WS2/BLG/WS2 sandwich device. (c) Resistance and conductivity as a function of top gate voltage (Vtg). (d) Resistance and conductivity as a function of back gate voltage (Vbg). Measurements were performed in vacuum at T= 4.2 K.
