Figure 3
From: Gate Modulation of the Spin-orbit Interaction in Bilayer Graphene Encapsulated by WS2 films
Weak antilocalization measurement. (a) Magnetoconductivity (∆σ = σ(B≠0) − σ(B=0) at different back gate voltages (Vbg). The top gate voltage (Vtg) is fixed at 0 V. (b) Magnetoconductivity with the dual gates applied. (c) Spin relaxation time as a function of Vbg (black line). The red line is the carrier concentration as a function of Vbg. (d) Spin relaxation time and charge carrier density as a function of Vtg at a fixed back gate voltage of −35 V. Measurements were performed in vacuum at T= 4.2 K.
