Figure 4

Current-induced magnetization switching under an applied magnetic field along the ±x-axis. (a,b) Anomalous Hall resistance in terms of pulsed current density of 1 ms duration coincident with the application of an external field, −600 Oe ≤ H ≤ +600 Oe, in multi-layer junctions (see text) with the CoFe layer pinned along the x-axis and –x-axis, respectively. (c,d) Variation of critical current density for Co layer switching in terms of the magnetic fields in (a) and (b), respectively.