Figure 4
(a) Trapping and (b) binding energy for each He interstitial atom in the V + nHe (n = 1, 2, 3, 4 and 5) complexes at the MDI region of the interfacial Cu and Nb layers.
Figure 4 | Scientific Reports
(a) Trapping and (b) binding energy for each He interstitial atom in the V + nHe (n = 1, 2, 3, 4 and 5) complexes at the MDI region of the interfacial Cu and Nb layers.
