Figure 2
From: Damage to epitaxial GaN layer on Al2O3 by 290-MeV 238U32+ ions irradiation
Typical 2D AFM images of the GaN film irradiated with 290-MeV U32+ ions at different fluences. Images a, b, and c show the surface morphologies of 1.0 × 1010, 1.0 × 1011 and 1.0 × 1012 ions/cm2 irradiation, respectively.
