Figure 4
From: Damage to epitaxial GaN layer on Al2O3 by 290-MeV 238U32+ ions irradiation
SEM images of hillock morphology and composition distribution on GaN surface after irradiation at different fluences. (A–C) are electron images for 1.0 × 1010, 1.0 × 1011 and 1.0 × 1012 ions/cm2 irradiation, respectively. Images a and c are an enlargement of the hillocks in images A and C, respectively. Image a' is an enlargement of the central region of image a. (a 1 ,b 1 ,c 1 ) are the EDS line-scan profiles of a hillock along the diameter corresponding to a', B and c.
