Figure 5
From: Damage to epitaxial GaN layer on Al2O3 by 290-MeV 238U32+ ions irradiation
GaN (0002) HRXRD patterns and rocking curves after irradiation with 290-MeV U32+ ions at fluences from 1.0 × 109 to 1.0 × 1012 ions/cm2.
Figure 5 | Scientific Reports
