Figure 6
From: Damage to epitaxial GaN layer on Al2O3 by 290-MeV 238U32+ ions irradiation
Ga2O3 (−202) HRXRD pattern of 290-MeV U32+ ions-irradiated GaN/Al2O3 with fluences from 1.0 × 109 to 1.0 × 1012 ions/cm2.
Figure 6 | Scientific Reports
