Figure 7
From: Damage to epitaxial GaN layer on Al2O3 by 290-MeV 238U32+ ions irradiation
Room temperature Raman scattering spectra of the GaN film with 290-MeV U32+-ion irradiation at different fluences. Inset shows amplified E2 (high) phonon energy of irradiated GaN film as a function of the fluence. All spectra are shifted vertically for clarity.
