Table 2 Comparison of the various parameters including μsat, Vth, Ion/Ioff ratio and SS for a-STO TFTs annealed at different conditions.

From: Induced nano-scale self-formed metal-oxide interlayer in amorphous silicon tin oxide thin film transistors

Annealing temperature (°C)

μsat (cm2/Vs)

Vth (V)

Ion/Ioff (×106)

SS (V/decade)

As-deposition

 

250

5.24 ± 0.55

4.02 ± 1.77

6.17 ± 0.91

0.70 ± 0.23

300

6.78 ± 0.14

3.41 ± 0.51

5.99 ± 0.49

0.82 ± 0.15