Figure 7
From: Dense Ge nanocrystals embedded in TiO2 with exponentially increased photoconduction by field effect
Photocurrent measurements on sample S550 of Ge NCs-TiO2/SiO2/Si (400 nm SiO2 thickness, 5 mm distance between electrodes). (a) Photocurrent spectra at RT for bias voltage varied in steps of 1 V. (b) Voltage dependence of the intensity of peaks at 870 nm and 1100 nm. Inset - deconvolution of spectrum for 9 V. (c) Schematic of samples and ac photocurrent paths for chopped light. (d–f) Comparison of the photocurrent spectra for +12 V and −12 V, for different shadowing of HI and LO electrode regions (schematic shown by insets): (d) without shadowing, (e) shadowed LO and (f) shadowed HI.
