Figure 8
From: Dense Ge nanocrystals embedded in TiO2 with exponentially increased photoconduction by field effect
Spectral photocurrent at RT for samples with Ge NCs in TiO2 of S550 layers: (a) sample with SiO2 buffer thickness of 30 nm (the inset shows the comparison of the voltage dependence of the peak intensity for 30 nm and 400 nm buffer thickness); (b) sample with smaller gap between electrodes d g of 2.5 mm – bias voltage varied in steps of 2 V (the inset shows the comparison of the voltage dependence of the peak intensity for d g of 2.5 mm and 5.0 mm); (c) comparison of the spectral photocurrent at RT for samples Sasd, S550 and S700.
