Figure 3 | Scientific Reports

Figure 3

From: Facile fabrication of wire-type indium gallium zinc oxide thin-film transistors applicable to ultrasensitive flexible sensors

Figure 3

(a) Schematic illustration of changes in the surface charge state of APTES-treated IGZO thin-films according to the variation of pH. Electrical characteristic with various pH solutions of (b) film-type and (c) wire-type IGZO sensors. Insets in b and c shows the value of gate voltage at the drain current of 500 nA under various pH conditions. Real-time response of the drain current of (d) film-type and (e) wire-type IGZO sensors for the variation of pHs from 9 to 5.

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