Figure 2 | Scientific Reports

Figure 2

From: Approach to high quality GaN lateral nanowires and planar cavities fabricated by focused ion beam and metal-organic vapor phase epitaxy

Figure 2

Modelling of the diffusion of growth precursors in the boundary layer under the masked surface. The half of the period of the structure, widths of the mask, open area and thickness of the boundary layer are denoted as l, a, w and b, respectively. (a) Concentration of the growth precursor C in the boundary layer over the masked surface calculated using differential equation (Eq. 2) and boundary conditions Eq. (3–8). Solid circular lines shows an isoline of bulk concentration used for development of a simplified analytical model. The dashed circular line indicates the distance corresponding to the mean free path of the precursors in gas (all shown not to scale). (b) Dependence of the relative growth rate R on the filling factor F calculated by Eq. (9) (blue circles), by analytical estimate Eq. (11) (red line) and dependence 1/F (green line). The squares show the experimentally obtained values of R. Upper top scale shows the corresponding width of the open area w. A horizontal dashed line shows the saturation value of the relative growth rate R S , while a vertical dashed line shows the size of the open area corresponding to the mean free path of the precursor in the gas.

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