Figure 4 | Scientific Reports

Figure 4

From: Approach to high quality GaN lateral nanowires and planar cavities fabricated by focused ion beam and metal-organic vapor phase epitaxy

Figure 4

(a) SEM and (b) panchromatic CL images of the planar GaN nanowires with width of 6 µm. (c) Low-temperature CL spectra measured at the same experimental conditions for different points on the stripe as indicated in the panchromatic CL image. Spectra are shifted vertically for clarity. (d) reflection spectra calculated according Eq. (12) for the GaN layer grown on sapphire with the layer thickness of 4333 and 4383 nm shown by green and red lines, respectively. Refractive index taken to 2.4 for GaN and 1.7 for sapphire. Vertical dashed lines show the energy shift of ~24 meV between interference maxima obtained for these cases.

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