Figure 4

Resonant soft-X-ray ARPES of 2-nm EuO/STO heterointerface through the Ti L-edge. (a) XAS spectrum. (b) Resonant photoemission from the valence band as a function of excitation energy. Intensity in the near-EF region is scaled up by ~30. (c) Resonant intensity for constant EB in the valence band, Eu level and 2DEG. The valence band and 2DEG signals follow the Ti L-edge XAS spectrum that confirms their Ti-derived character. (d,e) SX-ARPES images at hv = 460.3 and 466 eV enhancing the dxy- and dyz-derived states, respectively. The intensity waterfalls reveal the polaronic nature of the interface charge carriers. (f) Fermi surface of the interface states measured at hv = 466 eV.