Figure 3 | Scientific Reports

Figure 3

From: Correlating the nanostructure of Al-oxide with deposition conditions and dielectric contributions of two-level systems in perspective of superconducting quantum circuits

Figure 3

EELS spectra showing the ELNES of the Al-L2,3 and O-K edges in the AlOx-layers of all samples and a γ-Al2O3 reference specimen. Spectra of (a) Al-L2,3 and (b) O-K edges acquired in amorphous (EBPlas, EBPlas-UV and SPUT) and crystalline (EBLes and SPUT) regions. A spectrum of a crystalline γ-Al2O3 reference specimen is included. The edge onset of γ-Al2O3 at 76 eV is marked by a black line in (a). ‘t’ and ‘o’ correspond to tetrahedrally and octahedrally coordinated Al-atoms. (c) Shows the O-K edge acquired at AlOx-grain boundaries of EBLes and SPUT (solid lines) and within a crystalline region (dashed line) with (d) corresponding HRTEM image of a grain boundary region in SPUT. A boundary between two Al2O3-grains is marked by white arrows.

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