Figure 1
From: On-wafer fabrication of cavity mirrors for InGaN-based laser diode grown on Si
SEM images of GaN m- and a-plane sidewalls after being chemically polished in TMAH solution for various duration. (a) Schematic unit cell of hexagonal wurtzite structure. (b) The bird’s-eye view (tilted by 20°) SEM image of m-plane sidewall (the middle part) after the ICP dry etching. (c,d) The bird’s-eye view (tilted by 20°) and cross sectional images of m-plane sidewalls after a TMAH wet chemical polishing for 60 min. (e,f) The bird’s-eye view (tilted by 20°) and cross sectional images of m-plane sidewalls after a TMAH wet chemical polishing for 150 min. (g,h) The bird’s-eye view (tilted by 20°) SEM images of a-plane sidewalls after a TMAH wet chemical polishing for 60 and 150 min, respectively.
