Figure 4
From: On-wafer fabrication of cavity mirrors for InGaN-based laser diode grown on Si
SEM images of the InGaN-based LDs grown on Si with cavity mirrors fabricated by the dry etching and wet chemical polishing technique. (a) ICP dry etching only, and (b) followed by a TMAH wet chemical polishing. The dark lines in Fig. 4b on the facet were due to contamination after the facet was exposed to the ambient.
