Figure 5
From: On-wafer fabrication of cavity mirrors for InGaN-based laser diode grown on Si
Room temperature device characteristics for one of InGaN-based LD grown on Si with the cavity mirrors fabricated by dry etching and wet chemical polish technique. (a) EL spectra measured under various pulsed electrical currents (a pulse width of 400 ns and a repetition rate of 10 kHz). (b) Peak wavelength and FWHM of the EL spectra as a function of the injection current. (c) EL light output power as a function of the injection current. (d) and (e), Far-field patterns observed below and above the threshold current by setting a sheet of white paper in front of the emitting facet of the LD. No coating was applied to the cavity mirrors of the LD.
