Figure 2
From: Directed Self-Assembly of Ge Quantum Dots Using Focused Si2+ Ion Beam Patterning
AFM images of a Si wafer that was implanted with 60 keV Si2+ ions at (a) 2 × 105 ions per spot and (b) 6 × 105 ions per spot and the line profiles corresponding to lines 1 and 2 in the respective images. Note the development of a small surface crater in (b) denoted by the white arrow. Adapted from ref.32.
