Figure 5
From: Directed Self-Assembly of Ge Quantum Dots Using Focused Si2+ Ion Beam Patterning
Dark field images of defect structures formed after annealing different implanted patterns. (a) a square grid, (b) a square and (c) a donut shaped structure formed with a defocused beam. A (111) reflection is used for imaging. Si2+ implantation conditions were 2 × 103 ions per nm (~6–7 pA beam current, similar to Fig. 3).
