Figure 6
From: Interaction between hydrogen and gallium vacancies in β-Ga2O3

The defect concentration of complex vacancy against the hydrogen partial pressure with T = 1273 K and Ga-rich ((a) Ga(I), (b) Ga(II)).
From: Interaction between hydrogen and gallium vacancies in β-Ga2O3

The defect concentration of complex vacancy against the hydrogen partial pressure with T = 1273 K and Ga-rich ((a) Ga(I), (b) Ga(II)).