Figure 2
Raman spectra of few-layer 2H-SnS2. (a) Low- and high-frequency modes of 5L 2H-SnS2 measured with 441.6, 514.4, 532 and 632.8 nm lasers. (b) Excitation-energy dependence of the intensity of the A1g mode for 1L to 14L. (c) High-frequency modes of few-layer 2H-SnS2 measured by using the 532 nm laser in parallel polarization configuration. The Raman intensity of A1g mode in bulk layer is multiplied by 1/4. Inset shows the A1g-LA (M), Eg, and A1u modes of bulk 2H-SnS2. (d) The Eg mode measured by using the 441.6 nm laser in cross polarization configuration. (e) Evolution of the Raman intensity and peak positions of the A1g mode as a function of number of layers. The error bars indicate the spectral resolution of the setup.
