Figure 2 | Scientific Reports

Figure 2

From: The effect of nanometre-scale V-pits on electronic and optical properties and efficiency droop of GaN-based green light-emitting diodes

Figure 2

10 × 10 μm2 AFM scans and top-view SEM images of the green In0.25Ga0.75N/GaN MQWs grown on (a) 0, (b) 2, (c) 4, (d) 6, (e) 8, (f) 10 periods of In0.06Ga0.94N/GaN SL and on (g) a low-temperature GaN layer. The V-pit diameter is proportional to the number of SL periods. The thickness of the low-temperature GaN layer is equal to that of 6 periods of SL. (h) Cross-sectional TEM image of an MQW sample showing V-shaped pits.

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