Figure 4
From: Phase Modulators Based on High Mobility Ambipolar ReSe2 Field-Effect Transistors
(a) Drain to source current Ids normalized by a power of the temperature T as a function of the charge q = e for the n = 10 layers sample and for several positive values of the back gate voltage Vbg. (b) Same as in (a) but for negative values of Vbg. Both data sets in (a) and in (b) were measured under Vds = 50 mV. In both panels red lines are linear fits from which we extracted the gate voltage dependence of the Schottky barrier ϕSB (Vbg) between metallic contacts and the semiconducting channel. (c) ϕSB as a function of Vbg, showing that in the limit of high gate voltages (flat band condition), the extracted Shottky barriers ΦB were ~200 meV for holes and ~16 meV for electrons respectively. (d) Conductivity σ = Ids/Vds l/w, where l and w are length and width of the semiconducting channel respectively, as a function of 1/T1/3 and for several gate voltages. Dark red lines are linear fits indicating that at lower temperatures the conductivity as a function of T can be described by the two-dimensional variable range hopping expression.
