Figure 4
From: Low-energy band structure and even-odd layer number effect in AB-stacked multilayer graphene
Comparison with band calculation. The dependence of nosc on total carrier density ntot for each band was calculated for graphene with three to seven layers using a Hamiltonian based on the effective mass approximation. The results are displayed as symbols, while the lines are guides for the eye. Carrier density was calculated from the energy contour of the dispersion relation at zero magnetic field. The SWMcC parameters for this calculation were γ0 = 3 eV, γ1 = 0.45 eV, γ2 = −0.023 eV, γ3 = 0.3 eV, γ4 = 0.04 eV, γ5 = 0.04 eV, and Δ′ = (Δ − γ2 + γ5) = 0.032 eV. Screening length λ was 0.33, 0.33, 0.33, 0.43, and 0.35 nm for layers three to seven, respectively. The SWMcC parameters for this calculation better reproduced the experimental results compared to the parameters used for graphite. The peaks for the bilayer are labeled as fb1, fb2, and fb3. The peak of the monolayer band is labeled fm.
