Figure 1 | Scientific Reports

Figure 1

From: Toward high-fidelity coherent electron spin transport in a GaAs double quantum dot

Figure 1

Sketch of our protocol for electron transport in a double quantum dot. The two-dimensional DQD resides at the interface of GaAs and the barrier material, with the growth-direction confinement much stronger than the in-plane confinement. The regions “QD1” and “QD2” label the two dots. Surface gates VL and VR can be used to adjust the detuning between the two dots, while Vt can be used to tune the tunnel coupling strength.

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