Figure 2
From: Multilayer graphene shows intrinsic resistance peaks in the carrier density dependence
Gate voltage dependence of resistance at zero magnetic field. (a) Bottom gate voltage Vbg dependence of resistivity ρ for different values of top gate voltages Vtg. From top to bottom, Vtg was varied from 7.5 V to −7.5 V in 2.5 V steps. T = 4.2 K. (b) Map of ρ as functions of carrier densities nbg and ntg, which are tuned by the bottom gate and the top gate voltages and were converted from Vtg and Vbg. Here, T = 4.2 K. B = 0 T. Arrows (a–d) show resistance ridge structure. The white dashed line is the trace of the charge neutrality point. (c) Replot of panel (b) against perpendicular electric flux density D⊥ and carrier density ntot. White broken lines (a–d) show positions of resistance ridges.
