Figure 2
From: Effects of Unusual Gate Current on the Electrical Properties of Oxide Thin-Film Transistors
C-V curves and schematic images for the transport of electron in each TFT device. (a) C-V characteristics for the MOSCAP structures in each TFT device with different IGZO size of 1.5 mm2 and 36 mm2. (b,c) Surface depletion states and capacitances for turn-off condition of the TFTs with (b) 1.5 mm2 and (c) 36 mm2 IGZO area. (d,e) Surface accumulation states and electron transport for turn-on condition of the TFTs with (d) 1.5 mm2 and (e) 36 mm2 IGZO area. (f,g) Equivalent circuit of each TFT with (f) 1.5 mm2 and (g) 36 mm2 IGZO area.
