Figure 3
(a) Hysteresis loops measured with the magnetic field applied along the out-of-plane (OOP) direction of the PC template for CNT networks (ϕ = 230 nm) grown at reduction potentials of −1.1, −1.0, −0.9 and −0.8 V and Cu oxidation potential of 0.2 V. The hysteresis loop for a Ni CNW network with ϕ = 230 nm (black continuous line) electrodeposited at −1.0 V is added for comparison. (b) Corresponding hysteresis loops for the samples in (a) measured with the magnetic field applied along the in-plane (IP) direction of the PC template. (c) Comparison between the hysteresis loops measured in the OOP and IP directions for the CNT network fabricated at a deposition potential of −1 V. The inset shows a close view of the same figure at low field values.
