Figure 3
From: Overcoming Carrier Concentration Limits in Polycrystalline CdTe Thin Films with In Situ Doping
(A) EBSD grain orientation map and corresponding. (B) TOF-SIMS phosphorous image 25×25 µm showing phosphorous accumulates at the grain boundaries during ex-situ dopant incorporation in CdTe and (C) 3-D rendering of the phosphorous distribution (25 × 25 × 0.9 µm) for ex-situ-diffusion polycrystalline CdTe. This is contrasted with (D) a 3-D rendering of the phosphorus distribution (25 × 25 × 1.0 um) for in-situ incorporation by vapor transport deposition. The films have similar grain structure, but phosphorous grain boundary aggregation is not observed in the latter.
