Table 1 Properties of group V dopants and corresponding substitutional defects.
From: Overcoming Carrier Concentration Limits in Polycrystalline CdTe Thin Films with In Situ Doping
Group V Dopant | pSat @550 C (Torr) | Covalent Radius (pm) | Defect | Energy Level EV + (meV) | Defect Formation Enthalpy (eV) |
|---|---|---|---|---|---|
P | >3000 | 106 | P Te | 50 | 1.83 |
As | 220 | 120 | As Te | 100 | 1.68 |
Sb | 0.012 | 140 | Sb Te | 230 | 1.72 |
